Max Planck Institute for Solid State Research
2 ARTICLES PUBLISHED IN JoVE
Engineering
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Mohammad Rashidi 1,2, Wyatt Vine 1, Jacob A.J. Burgess 3,4,5, Marco Taucer 1,2,6, Roshan Achal 1, Jason L. Pitters 2, Sebastian Loth 3,4, Robert A. Wolkow 1,2
1Department of Physics, University of Alberta, 2National Institute for Nanotechnology, National Research Council of Canada, Edmonton, 3Max Planck Institute for the Structure and Dynamics of Matter, 4Max Planck Institute for Solid State Research, 5Department of Physics and Astronomy, University of Manitoba, 6Joint Attosecond Science Laboratory, University of Ottawa
We demonstrate an all-electronic method to observe nanosecond-resolved charge dynamics of dopant atoms in silicon with a scanning tunneling microscope.
JoVE Core
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Feng Qin 1, Toshiya Ideue 1, Wu Shi 2, Yijin Zhang 3,4, Ryuji Suzuki 1, Masaro Yoshida 5, Yu Saito 1, Yoshihiro Iwasa 1,5
1Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, 2Materials Sciences Division, Lawrence Berkeley National Laboratory, 3Institute of Scientific and Industrial Research, Osaka University, 4Max Planck Institute for Solid State Research, 5RIKEN Center for Emergent Matter Science (CEMS)
Here, we present a protocol to control the carrier number in solids by using the electrolyte.
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